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Hybrid+perovskite+nanostructures

Novel Material Properties of Hybrid Perovskite Nanostructures for Next-generation Non-linear Electronic Devices (from left: Juho Lee, Dr. Muhammad Ejaz Khan and Professor Yong-Hoon Kim) A KAIST research team reported a novel non-linear device with the founding property coming from perovskite nanowires. They showed that hybrid perovskite-derived, inorganic-framework nanowires can acquire semi-metallicity, and proposed negative differential resistance (NDR) devices with excellent NDR characteristics that resulted from a novel quantum-hybridization NDR mechanism, implying the potential of perovskite nanowires to be realized in next-generation electronic devices. Organic-inorganic hybrid halide perovskites have recently emerged as prominent candidates for photonic applications due to their excellent optoelectronic properties as well as their low cost and facile synthesis processes. Prominent progresses have been already made for devices including solar cells, light-emitting diodes, lasers and photodetectors. However, research on electronic devices based on hybrid halide perovskites has not been actively pursued compared with their photonic device counterparts. Professor Yong-Hoon Kim from the School of Electrical Engineering and his team took a closer look at low-dimensional organic-inorganic halide perovskite materials, which have enhanced quantum confinement effects, and particularly focused on the recently synthesized trimethylsulfonium (TMS) lead triiodide (CH3)3SPbI3. Using supercomputer simulations, the team first showed that stripping the (CH3)3S or TMS organic ligands from the TMS PbI3 perovskite nanowires results in semi-metallic PbI3 columns, which contradicts the conventional assumption of the semiconducting or insulating characteristics of the inorganic perovskite framework. Utilizing the semi-metallic PbI3 inorganic framework as the electrode, the team designed a tunneling junction device from perovskite nanowires and found that they exhibit excellent nonlinear negative differential resistance (NDR) behavior. The NDR property is a key to realizing next-generation, ultra-low-power, and multivalued non-linear devices. Furthermore, the team found that this NDR originates from a novel mechanism that involves the quantum-mechanical hybridization between channel and electrode states. Professor Kim said, “This research demonstrates the potential of quantum mechanics-based computer simulations to lead developments in advanced nanomaterials and nanodevices. In particular, this research proposes a new direction in the development of a quantum mechanical tunneling device, which was the topic for which the Nobel Laureate in Physics in 1973 was awarded to Dr. Leo Esaki. This research, led by Dr. Muhammad Ejaz Khan and PhD candidate Juho Lee, was published online in Advanced Functional Materials (10.1002/adfm.201807620) on January 7, 2019. Figure. The draft version of the cover page of 'Advanced Functional Materials'
2019.02.22 View 6584

KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea T.042-350-2114 F.042-350-2210(2220)