DRAM
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Samsung Electronics' Chairman Kwon Becomes the First Alumnus Honorary Doctorate
(Samsung Electronics' Chairman & CEO Kwon,left, and President Shin)
The semiconductor has bred innovation in Korea, as one of the staples of economic growth. Without the success of the semiconductor industry of Korea, it is hard to imagine the high tech dominance in the global market enjoyed by Korean companies.
It is said that one in every four Ph.D.s working in the semiconductor industry of Korea graduated from KAIST. Among them, Chairman and CEO Oh-Hyun Kwon of Samsung Electronics, Class of 1977, has arrived at the epitome of this top industry.
KAIST’s class of 1977 produced many movers and shakers in Korea’s innovation efforts. Now in their mid-60s, they were the players who embodied Korea’s ICT and helped it become a global powerhouse. They are the ones who worked for and witnessed the socio-economic transformation of Korea through innovation.
In recognition of his unsurpassable entrepreneurship, which made the remarkable strides in the semiconductor and electronics industry in Korea and beyond, Chairman Kwon was honored as the first recipient of an honorary doctorate from his alma mater on February 23 during the 2018 commencement ceremony.
After completing his Master's in Electrical Engineering at KAIST in 1977, he earned his Ph.D. in Electrical Engineering from Stanford University. The first honorary degree bestowed to an alumnus was conferred by the first alumnus President of KAIST Sung-Chul Shin. President Shin said that Chairman Kwon’s exceptional leadership has inspired the KAIST community and exemplified the spirit of KAIST.
Currently serving as chairman & CEO of Samsung Electronics and Samsung Advanced Institute of Technology (SAIT), Kwon has worked for Samsung in a variety of key positions in their semiconductor division since 1985.
In the mid-1980s, Japan was leading the global semiconductor market. At Samsung, Chairman Kwon, who was in charge of the memory semiconductor team, successfully developed 4M DRAM. Later in 1992, he played a leading role in the development of the world’s first 64M DRAM.
The success of 4M DRAM and 64M DRAM led Samsung to clinch the top position in the DRAM and NAND flash business around the world. This helped Samsung emerge as a global leader in the semiconductor industry.
As a result, Samsung, as well as the national economy, could gain significant momentum to build national competitiveness and economic growth. The outstanding technological leadership of Chairman Kwon led to the development of proprietary semiconductor design and processes technologies as well as numerous patents.
He also played a leadership role in creating a mutual growth environment among conglomerates rather than merely engaging in direct competition. Chairman Kwon made every effort to establish the cornerstone of mutual growth, especially in relationships with small and medium-sized enterprises (SMEs). His win-win collaboration initiatives among conglomerates and SMEs made a significant impact on the development of the entire industry of Korea.
In his acceptance speech, he charged the graduates to embrace challenges, to collaborate with peers, and create their own future.
The full text of his speech is printed below.
Graduates and distinguished guests! I extend my sincere congratulations to my fellow graduates, as you are awarded degrees for your deep efforts, as well as to the parents and family members who have supported you.
In 1977, I received my Master’s degree in Electrical Engineering from KAIST. Today, as the first honorary doctor among KAIST graduates, I am truly honored to be here. I am deeply grateful to all of you, including President Sung-Chul Shin and the Chairman of the Board of Trustees, Jang-Moo Lee.
Today, I want to tell you about the experiences and lessons I have learned from my 40 years of corporate management experience.
First, you should lead and drive changes by yourself. In the process of realizing a dream, the situation and circumstances do not always proceed as you planned.
I started my career as a researcher. However, I had to continuously transform myself into a project leader, business team leader, and CEO. It was challenging every time, due to a lack of preparing and my insufficient ability. However, I have always accomplished the intended goal through the mindset of embracing changes and studying new things.
It is said that the survivors are not always the strongest nor the most intelligent, but the ones who are the most adaptive to changes. We can only be the last survivor if we have the character to see those small signs that signal changes are coming and cope with changes well. Take changes positively and actively and then, transform yourself to match a given situation.
In addition, it is important to understand others. When it comes to one’s career, there is nothing that you can do alone without the assistance of others. If it is not possible to do everything by yourself, you will need to supplement your efforts through the help of others. To do this, you need to understand your colleagues, bosses, and customers first.
People, who work in tech tend to cage themselves in their own silos. But in an era of destructive innovation, where boundaries of industries and technologies are collapsing at a breakneck pace, scientists also need to enhance their understanding of various areas such as culture, art, and the humanities.
This is a famous verse from a poem by Chun-Soo Kim.
Before I called his name,
He was nothing but a gesture.
When I called his name, He came to me and became a flower.
Make wonderful synergy by making your partner a flower and complementing each other. When you first notice the true value of another person and interact with them, the value of the individual will be doubled and will bring about a greater impact.
Finally, we all need to cooperate with each other. All of you here, including myself, are people who have benefited from society. We must cooperate with each other and give back to society for the best results.
A biologist once said that incremental evolution comes from competition, but fundamental evolution comes from cooperation. Great leaders should achieve results through cooperation rather than competition.
You are the future leaders with top-class knowledge. I hope you will become great leaders who have wisdom that combines external resources with your abilities.
Now, graduates of 2018 who are standing at the starting line, we often worry about an unpredictable tomorrow. However, the smartest way to predict the future is to create the future for ourselves. Moreover, we can try again even though we sometimes make mistakes. I urge you to make future you are hoping for.
Once again, I would like to thank you for this honorary doctorate and extend my sincere wishes for the endless development of KAIST and the best of luck to the futures of these graduates. Thank you.
2018.02.26 View 6984 -
The 2018 Commencement of KAIST at a Glance
KAIST awarded a total of 2, 736 degrees at the 2018 commencement ceremony on February 23. Among the honorees, Chairman and CEO of Samsung Electronics and Samsung Advanced Institute of Technology (SAIT) Oh-Hyun Kwon was recognized as the first alumnus honorary doctorate recipient of KAIST.
More than 5,000 family, friends, and graduates including distinguished guests of Minister of Science and ICT Young-Min Yu, the Member of National Assembly Kyung-Jin Kim, Chairman of the KAIST Board of Trustees Jang-Moo Lee, and the Chairperson of the KAIST Development Foundation Soo-Young Lee attended to celebrate the graduates. During the commencement, a total of 2,736 students earned degrees: 644 PhD degrees, 1,352 master’s degrees, and 740 bachelor’s degrees.
(Minister of Science and ICT Young-Min Yu)
(The Member of National Assembly Kyung-Jin Kim)
This year, Chairman and CEO of Samsung Electronics and SAIT Kwon shared the spotlight with many other graduates. Kwon received his Master’s degree in Electrical Engineering from KAIST in 1977 and completed his Ph.D. in Electrical Engineering from Stanford University in 1985. During his more than 33-year career at Samsung, he has made significant contribution to the development of 4M DRAM and the world’s first 64M DRAM. The success of 4M DRAM and 64 DRAM led Samsung to clinch the top position in the DRAM and NAND flash business around the world. This helped Samsung emerge as a global leader in the semiconductor industry.
(From left: Chairman and CEO of Samsung Electronics and SAIT Oh-Hyun Kwon and KAIST President Sung-Chul Shin)
During the commencement speech, Kwon and President Shin both highlighted the importance of collaboration instead of competition.
Kwon encouraged the graduates to understand others to make wonderful synergy. “When you first notice the true value of another person and interact with them, the value of the individual will be doubled and will bring about a greater impact,” he said.
Also, he stressed having a collaborative mindset by saying, “All of you here, including myself, are people who have benefited from society. We must cooperate with each other and give back to society for the vest results.”
While highlighting the core values of KAIST, creativity, challenge and caring, President Shin also emphasized collaboration with others. He said, “In the future, expertise in a single discipline will not lead to new inventions or discoveries. This highlights the importance of multidisciplinary, convergence research. The key to success lies in the acknowledgement of your peers as partners for mutual growth. Your partners will make up your weak areas and become your most important asset. May you expand your personal network by finding valuable partners not only within your laboratory and workplace, but beyond Korea.”
“Go out into the world and change it as a global shaper, global innovator, and global mover. I hope that each and every one of you will add benefits the world and your legacy will be remembered for generations to come. This is your obligation as a graduate of KAIST,” he said.
Click here to view the full text of President Sung-Chul Shin’s address to the graduates
+ List of academically outstanding undergraduate degree recipients who received honors during the Commencement 2018 of KAIST
Award
Department
Winner
Minister of Science and ICT Award
Dept. of Mathematical Sciences
Seong-Hyeok Park
KAIST Board Chairperson Award
School of Computing
Hyeong-Seok Kim
KAIST President Award
Dept. of Chemistry
Hoi-Min Cheong
KAIST Development Foundation Chairperson Award
Dept. of Biological Sciences
Gi-Song Kim
Dept. of Industrial & Systems Engineering
Seung-Hun Lee
2018.02.23 View 9785 -
High-Speed Motion Core Technology for Magnetic Memory
(Professor Kab-Jin Kim of the Department of Physics)
A joint research team led by Professor Kab-Jin Kim of the Department of Physics, KAIST and Professor Kyung-Jin Lee at Korea University developed technology to dramatically enhance the speed of next generation domain wall-based magnetic memory. This research was published online in Nature Materials on September 25.
Currently-used memory materials, D-RAM and S-RAM, are fast but volatile, leading to memory loss when the power is switched off. Flash memory is non-volatile but slow, while hard disk drives (HDD) have greater storage but are high in energy usage and weak in physical shock tolerance.
To overcome the limitations of existing memory materials, ‘domain wall-based, magnetic memory’ is being researched. The core mechanism of domain wall magnetic memory is the movement of a domain wall by the current. Non-volatility is secured by using magnetic nanowires and the lack of mechanical rotation reduced power usage. This is a new form of high density, low power next-generation memory.
However, previous studies showed the speed limit of domain wall memory to be hundreds m/s at maximum due to the ‘Walker breakdown phenomenon’, which refers to velocity breakdown from the angular precession of a domain wall. Therefore, there was a need to develop core technology to remove the Walker breakdown phenomenon and increase the speed for the commercialization of domain wall memory.
Most domain wall memory studies used ferromagnetic bodies, which cannot overcome the Walker breakdown phenomenon. The team discovered that the use of ‘ferrimagnetic‘ GdFeCo at certain conditions could overcome the Walker breakdown phenomenon and using this mechanism they could increase domain wall speed to over 2Km/s at room temperature.
Domain wall memory is high-density, low-power, and non-volatile memory. The memory could be the leading next-generation memory with the addition of the high speed property discovered in this research.
Professor Kim said, “This research is significant in discovering a new physical phenomenon at the point at which the angular momentum of a ferrimagnetic body is 0 and it is expected to advance the implementation of next-generation memory in the future.”
This research was funded by the National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIP) (No. 2017R1C1B2009686, NRF-2016R1A5A1008184) and by the DGIST R&D Program of the Ministry of Science, ICT and Future Planning (17-BT-02).
(Figure 1. Concept Map of Domain Wall Memory Material using Ferrimagnetic Body)
(Figure 2. Scheme and Experimental Results of Domain Wall Speed Measurements)
2017.10.30 View 7624